Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

被引:22
作者
Hokazono, A
Tsugawa, K
Umezana, H
Kitatani, K
Kawarada, H
机构
[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 169, Japan
[2] Japan Sci & Technol, CREST, Shinjuku Ku, Tokyo 169, Japan
关键词
D O I
10.1016/S0038-1101(99)00090-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Metal-oxide-semiconductor field effect transistors (MOSFETs) with a surface p-channel have been fabricated on hydrogen-terminated diamond (001) surfaces without doping, The maximum transconductance of the device with the gate length of 6 mu m is 16 mS/mm, which is the highest in diamond MOSFETs and comparable to that of silicon n-channel MOSFET with the same gate length. The relatively high transconductance is due to the low density of surface states on hydrogen-terminated diamond. The diamond MOSFETs operate at the temperatures of up to 330 degrees C in air without any passivation of the device surfaces. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1465 / 1471
页数:7
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