The influence of hydrogen and nitrogen on the floating zone growth of ultra-pure silicon crystals

被引：1

作者：

Becker, P ^{[1
]}

Bettin, H ^{[1
]}

Kuetgens, U ^{[1
]}

Basile, G ^{[1
]}

Riemann, H ^{[1
]}

Von Ammon, W ^{[1
]}

Goerigk, G ^{[1
]}

机构：

[1] Phys Tech Bundesanstalt, D-3300 Braunschweig, Germany

来源：

2002 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS, CONFERENCE DIGEST | 2002年

关键词：

D O I：

10.1109/CPEM.2002.1034972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A scientific program was initiated, to study the influence of hydrogen on the floating zone (FZ) growth of ultra-pure silicon crystals and their lattice perfection. The work is part of a project with the aim to replace the kilogram artefact by the mass of a certain number of silicon atoms which requires, within a relative uncertainty of a few parts in 10-8. This paper aims to give new informations about the given experience concerning the influence of hydrogen on the qualities of dislocation-free FZ silicon and an explanation of the M/p inconsistency mentioned.

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页码：564 / 565

页数：2

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