Ferroelastic domain structure and switching in epitaxial ferroelectric thin films

被引：69

作者：

Lee, Kilho ^{[1
]}

Baik, Sunggi ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

来源：

ANNUAL REVIEW OF MATERIALS RESEARCH | 2006年 / 36卷

关键词：

misfit strain relaxation; synchrotron X-ray diffraction; reciprocal space mapping; finite element method; size effects;

D O I：

10.1146/annurev.matsci.36.090804.094613

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Unique ferroelastic polytwin domains are formed in epitaxial ferroelectric thin films prepared on single-crystal substrates and critically influence various ferroelectric properties. This chapter reviews theoretical as well as experimental studies on various thermomechanical strain factors and their relaxation involved in domain formation and switching during film processing and device fabrication and application. Two major strain relaxation mechanisms, misfit strain relaxation by dislocations and the formation of polytwin structures, are reviewed. The critical factors controlling the final domain structures, such as substrate selection, film composition, film thickness, introduction of an interlayer, and the lateral size of film patterning, are described in detail. This chapter also includes recent experimental evidence of ferroelastic domain switching in such highly confined epitaxial thin films as well as in small islands.

引用

页码：81 / 116

页数：36

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