Hopping conduction in size-controlled Si nanocrystals

被引:44
作者
Rafiq, M. A.
Tsuchiya, Y.
Mizuta, H.
Oda, S.
Uno, Shigeyasu
Durrani, Z. A. K.
Milne, W. I.
机构
[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England
[2] Tokyo Inst Technol, Dept Phys Educ, Meguro Ku, Tokyo 1528552, Japan
[3] Nagoya Univ, Grad Sch Engn, Dept Elect Engn & Comp Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[4] Univ Cambridge, Dept Engn, Elect Devices & Mat Grp, Cambridge CB2 1PZ, England
关键词
D O I
10.1063/1.2209808
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the temperature dependence of conduction in size-controlled silicon nanocrystals. The nanocrystals are similar to 8 nm in diameter, covered by similar to 1.5 nm thick SiO2 shells. In 300 nm thick films for temperatures T from 30 to 200 K, the conductivity sigma follows a ln(sigma) vs 1/T-1/2 dependence. This may be associated with either percolation-hopping conductance or Efros-Shklovskii variable range hopping. Assuming hopping sites only on the nanocrystals, the data agree well with the percolation model. (c) 2006 American Institute of Physics.
引用
收藏
页数:4
相关论文
共 23 条
[1]  
[Anonymous], J PHYS C SOLID STATE
[2]   NONLINEAR ELECTRICAL-TRANSPORT IN POROUS SILICON [J].
BENCHORIN, M ;
MOLLER, F ;
KOCH, F .
PHYSICAL REVIEW B, 1994, 49 (04) :2981-2984
[3]   Carrier transport in thin films of silicon nanoparticles [J].
Burr, TA ;
Seraphin, AA ;
Werwa, E ;
Kolenbrander, KD .
PHYSICAL REVIEW B, 1997, 56 (08) :4818-4824
[4]   Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix [J].
Chen, LY ;
Chen, WH ;
Hong, FCN .
APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3
[5]   ZnO/PMMA thin film nanocomposites for optical coatings [J].
Chen, Q ;
Schadler, LS ;
Siegel, RW ;
Irvin, GC .
NANOCRYSTALS AND ORGANIC AND HYBRID NANOMATERIALS, 2003, 5222 :158-162
[6]   Nanocrystal superlattices [J].
Collier, CP ;
Vossmeyer, T ;
Heath, JR .
ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1998, 49 :371-404
[7]   ELECTROLUMINESCENCE FROM CDSE QUANTUM-DOT POLYMER COMPOSITES [J].
DABBOUSI, BO ;
BAWENDI, MG ;
ONITSUKA, O ;
RUBNER, MF .
APPLIED PHYSICS LETTERS, 1995, 66 (11) :1316-1318
[8]   Electron transport in nanocrystalline Si based single electron transistors [J].
Dutta, A ;
Oda, S ;
Fu, Y ;
Willander, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (7B) :4647-4650
[9]   Current transport properties of SiO2 films containing Ge nanocrystals [J].
Fujii, M ;
Mamezaki, O ;
Hayashi, S ;
Yamamoto, K .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (03) :1507-1512
[10]   Hopping conduction in SiO2 films containing C, Si, and Ge clusters [J].
Fujii, M ;
Inoue, Y ;
Hayashi, S ;
Yamamoto, K .
APPLIED PHYSICS LETTERS, 1996, 68 (26) :3749-3751