Formation of dry etched gratings in GaN and InGaN

被引：3

作者：

Lee, JW ^{[1
]}

Hong, J ^{[1
]}

Mackenzie, JD ^{[1
]}

Abernathy, CR ^{[1
]}

Pearton, SJ ^{[1
]}

Ren, F ^{[1
]}

Sciortino, PF ^{[1
]}

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 03期

关键词：

electron cyclotron resonance-reactive ion etching (ECR-RIE); GaN; gratings; InGaN;

D O I：

10.1007/s11664-997-0166-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sub-micron periodic gratings with pitch similar to 3,000 Angstrom were formed in GaN and InGaN using holographic lithography and room temperature electron cyclotron resonance (ECR) BCl3/N-2 dry etching at moderate microwave (500 W) and radio frequency (100 W) powers. The process produces uniform gratings without the need for elevated sample temperatures during the etch step.

引用

页码：290 / 293

页数：4

共 27 条

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