Atomic force microscope lithography in perovskite manganite La0.8Ba0.2MnO3 films

被引：23

作者：

Li, RW

Kanki, T

Tohyama, HA

Zhang, J

Tanaka, H

Takagi, A

Matsumoto, T

Kawai, T

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 56700476, Japan

[2] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[3] Univ Nebraska, Ctr Mat Res & Anal, Lincoln, NE 68588 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 11期

关键词：

D O I：

10.1063/1.1690198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic force microscopy (AFM) lithography has been investigated in La0.8Ba0.2MnO3 (LBMO) films. Unexpectedly, AFM lithography can be performed in LBMO film not only under a positive sample bias, but also under a negative sample bias. Under a positive sample bias voltage, grooves can be obtained directly with poor controllability and reproducibility. However, under a negative sample bias, controllable nanosized patterns were obtained with excellent reproducibility and a high etching selectivity. It is expected that various nanodevices will be fabricated by AFM lithography and etching techniques with perovskite manganites. (C) 2004 American Institute of Physics.

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页码：7091 / 7093

页数：3

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