Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation

被引：25

作者：

Bo, XZ ^{[1
]}

Rokhinson, LP ^{[1
]}

Yin, HZ ^{[1
]}

Tsui, DC ^{[1
]}

Sturm, JC ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect Mat, Princeton, NJ 08544 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 17期

关键词：

D O I：

10.1063/1.1515113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two nanopatterning methods for silicon/silicon-germanium (Si/SiGe) heterostructures are demonstrated: (1) direct atomic force microscopy (AFM) oxidation on SiGe layers and (2) AFM oxidation on silicon followed by selective wet etching of SiGe. When directly oxidizing SiGe alloys, minimum linewidths of 20 nm were achieved by adjusting the bias voltage of the AFM tip. By AFM oxidation and selective wet etching, a 10-nm-thick conducting SiGe layer was patterned to form features under similar to50 nm. Fabricated SiGe quantum dots with side gates exhibited Coulomb blockade oscillation. (C) 2002 American Institute of Physics.

引用

页码：3263 / 3265

页数：3

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