Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography

被引：345

作者：

Dumon, P ^{[1
]}

Bogaerts, W

Wiaux, V

Wouters, J

Beckx, S

Van Campenhout, J

Taillaert, D

Luyssaert, B

Bienstman, P

Van Thourhout, D

Baets, R

机构：

[1] State Univ Ghent, INTEC, Dept Informat Technol, Photon Res Grp, B-9000 Ghent, Belgium

[2] IMEC VZW, Silicon Proc Technol Div, B-3001 Louvain, Belgium

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 05期

关键词：

high index contrast; photonic wire; ring resonators; silicon-on-insulator (SOI) technology;

D O I：

10.1109/LPT.2004.826025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate single-mode photonic wires in Silicon-on-insulator with propagation loss as low as 2.4 dB/cm, fabricated with deep ultraviolet lithography and dry etching. We have also made compact racetrack and ring resonators functioning as add-drop filters, attaining Q values larger than 3000 and low add-drop crosstalk.

引用

页码：1328 / 1330

页数：3

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