In situ EELS and TEM observation of silicon carbide irradiated with helium ions at low temperature and successively annealed

被引：32

作者：

Hojou, K ^{[1
]}

Furuno, S ^{[1
]}

Kushita, KN ^{[1
]}

Otsu, H ^{[1
]}

Furuya, Y ^{[1
]}

Izui, K ^{[1
]}

机构：

[1] NAGASAKI UNIV,FAC EDUC,NAGASAKI 852,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 116卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(96)00075-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Structural and compositional changes in SIC crystal due to helium ion irradiation were examined by an electron microscope equipped with a thermal field-emission gun and electron energy-loss spectroscope. Amorphization was confirmed both by the shift of the plasmon loss peaks and the change of the carbon core loss peaks in EELS as well as by the change of electron diffraction patterns in SIC irradiated with 12 keV helium ions to a fluence above 6 x 10(19) ions/m(2) at 22 K. He 1s-2p transition peak (21.8-23.8 eV) was observed for SiC irradiated to a fluence above 1.8 x 10(21) ions/m(2) at 22 K. Recrystallization was found to occur during annealing above 1173 K after the irradiation.

引用

页码：382 / 388

页数：7

共 9 条

[1]

EGERTON RF, 1986, ELECTRON ENERGY LOSS, P151

[2] INSITU OBSERVATION OF DAMAGE EVOLUTION IN SIC CRYSTALS DURING HE+ AND H-2+ DUAL-ION BEAM IRRADIATION [J].