Synthesis of B-C-N thin films by electron beam excited plasma CVD

被引：12

作者：

Hasegawa, T

Yamamoto, K

Kakudate, Y

机构：

[1] Japan Fine Ceram Ctr, FCT Project, FCT Lab, Tsukuba, Ibaraki 3058565, Japan

[2] Natl Inst Adv Ind Sci & Technol, Res Ctr Adv Carbon Mat, Tsukuba, Ibaraki 3058565, Japan

来源：

关键词：

plasma; CVD; B-C-N; hardness;

D O I：

10.1016/S0925-9635(01)00613-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron-carbon-nitrogen (B-C-N) thin films were synthesized using an electron beam excited plasma (EBEP)-CVD method and their properties and structure investigated. By controlling the flow rate ratios of process gases, we obtained films with composition expressed as BxCyN, where x = 0.9-4.7 and y = 0.5-6.0. Hydrogen content is very small, of the order of 1 at. %. The hardness of the films increases monotonically with increasing boron content and reaches 29 GPa. Results of X-ray photoelectron spectroscopy, Fourier transform infrared transmission and X-ray diffraction measurements show that while the films consist of a sp(2)-bonded B-C-N structure in a boron poor region, a sp(3)-bonded structure exists as well as the sp(2)-bonded structure in a boron rich region. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1290 / 1294

页数：5

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