Recent studies on In2S3 containing oxygen thin films

被引：55

作者：

Barreau, N

Bernède, JC

El Maliki, H

Marsillac, S

Castel, X

Pinel, J

机构：

[1] Univ Nantes, LPSE, FSTN, Equipe Couches Minces & Mat Nouveaux, F-44322 Nantes 3, France

[2] Univ Rennes 1, URER, Grp Microelectron & Visualisat, F-35042 Rennes, France

来源：

SOLID STATE COMMUNICATIONS | 2002年 / 122卷 / 7-8期

关键词：

indium sulphide; thin films; optical properties; structural properties;

D O I：

10.1016/S0038-1098(02)00099-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Attention has recently been paid to In2S3 thin film,, because of their potential application as buffer layer in CIGS-based solar cells. In this paper, the recent studies performed oil such thin films deposited by chemical bath deposition (CBD) and physical vacuum deposition (PVD) are reported and compared. The main part of the experimental results exposed concerns the wide band gap PVD deposited beta-In2S3 thin films. The influence of the synthesis conditions on the physico-chemical. optical, and electrical properties are reported and discussed in the paper. The oxygen present in the CBD and PVD films has been found to be the origin of their optical properties, which make them a good candidate to substitute CdS in thin films solar cells as buffer layer. The films have a n-type electrical conductivity and their optical band gap is about 2.8 eV. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：445 / 450

页数：6

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