Fabrication of self-defined gated field emission devices on silicon substrates using PECVD-grown carbon nano-tubes

被引：38

作者：

Koohsorkhi, J. ^{[1
]}

Abdi, Y. ^{[1
]}

Mohajerzadeh, S. ^{[1
]}

Hosseinzadegan, H. ^{[1
]}

Komijani, Y. ^{[1
]}

Soleimani, E. Asl. ^{[1
]}

机构：

[1] Univ Tehran, Dept Elect & Comp Engn, Nonoelect Ctr Excellence, Nanoelect & Thin Film Lab, Tehran, Iran

来源：

CARBON | 2006年 / 44卷 / 13期

关键词：

carbon nanotubes; plasma deposition; field emission; electric properties;

D O I：

10.1016/j.carbon.2006.03.038

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Fabrication of novel self-defined gated field-emission devices on silicon substrates using vertically grown carbon nano-tubes (CNT) is reported. Carbon nano-tubes are grown in a PECVD reactor from the Ni catalyst islands at a pressure of 1.6 Torr with a mixture Of C2H2 and H-2 gases with 5 and 30 sccm flows, respectively. The growth occurs at temperatures ranging between 550 and 650 degrees C and CNT's are electrically isolated by a TiO2 film. Silver is used as the metal gate and complete fabrication of transistors requires removing the insulating layer from top of the tip followed by one step of plasma as hing. With a voltage applied between gate and the cathode electrode, the emission current from cathode to anode shows a significant drop, indicating proper control of gate on the anode current. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：2797 / 2803

页数：7

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