Recent trends and future prospective on millimeter-wave CMOS circuits

被引:8
作者
Fujishima, Minoru [1 ]
机构
[1] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源
IEICE ELECTRONICS EXPRESS | 2009年 / 6卷 / 11期
关键词
millimeter wave; CMOS circuit; high-speed wireless communication; digital home appliance; TECHNOLOGY;
D O I
10.1587/elex.6.721
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Millimeter-wave communication uses a frequency of at least 30 GHz, which is higher than that commonly used for wireless local-area networks (LANs) and cellular phones. Millimeter waves have been used for business communications and radar in luxury cars; however, their use has not yet spread to the general public. In recent years, an increasing amount of research results on millimeter-wave complementary metal-oxide semiconductor (CMOS) integrated circuits has been reported in line with the increasing attention focused on millimeter waves used for high-speed wireless communication, which can realize a communication speed higher than 1 Gbps. We discuss the social background behind this recent change in communication technologies and examine the challenges and future prospects of millimeter-wave CMOS integrated circuits.
引用
收藏
页码:721 / 735
页数:15
相关论文
共 7 条
[1]   60 GHz CMOS pulse generator [J].
Badalawa, B. B. M. Wasanthamala ;
Fujishima, M. .
ELECTRONICS LETTERS, 2007, 43 (02) :100-102
[2]  
FUJISHIMA M, 2007, IEICE GEN C
[3]  
Johnson E., 1966, 1958 IRE INT CONV RE, V13, P27
[4]  
LaRocca T, 2008, IEEE RAD FREQ INTEGR, P55
[5]   19.2mW 2Gbps CMOS pulse receiver for 60GHz band wireless communication [J].
Oncu, Ahmet ;
Fujishima, Minoru .
2008 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2008, :158-159
[6]   A chip-scale packaging technology for 60-GHz wireless chipsets [J].
Pfeiffer, Ullrich R. ;
Grzyb, Janusz ;
Liu, Duixian ;
Gaucher, Brian ;
Beukema, Troy ;
Floyd, Brian A. ;
Reynolds, Scott K. .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (08) :3387-3397
[7]   50-200 GHz silicon-germanium heterojunction bipolar transistor BICMOS technology and a computer-aided design environment for 2-50+GHz very large-scale integration mixed-signal ICs [J].
Subbanna, S ;
Freeman, G ;
Rieh, JS ;
Ahlgren, D ;
Stein, K ;
Dickey, C ;
Mecke, J ;
Bacon, P ;
Groves, R ;
Meghelli, M ;
Soyuer, M ;
Jagannathan, B ;
Schonenberg, K ;
Jeng, SJ ;
Joseph, A ;
Coolbaugh, D ;
Volant, R ;
Greenberg, D ;
Chen, HJ ;
Brelsford, K ;
Harame, D ;
Dunn, J ;
Larson, L ;
Herman, D ;
Meyerson, B .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B) :1111-1123