Fabrication and characterization of gated field emitter arrays with self-aligned carbon nanotubes grown by chemical vapor deposition

被引:104
作者
Han, IT
Kim, HJ
Park, YJ
Lee, N
Jang, JE
Kim, JW
Jung, JE
Kim, JM
机构
[1] Samsung Adv Inst Technol, FED Project Team, Suwon 440600, South Korea
[2] Seoul Natl Univ, Dept Chem, Seoul 151742, South Korea
关键词
D O I
10.1063/1.1506408
中图分类号
O59 [应用物理学];
学科分类号
摘要
Field emitter arrays with multiwall carbon nanotubes (CNTs) grown inside their gated holes were fabricated on glass substrates. The Fe-Ni-Co alloy catalyst dots on which the CNTs would be grown were deposited into the gated holes by a self-aligned method to maintain a constant distance between CNT emitters and gate electrodes. The CNTs were synthesized by thermal chemical vapor deposition using a gas mixture of CO and H-2 at 500 degreesC. The CNT lengths were controlled by changing ratios of CO to H-2. Field emission currents and images were monitored as a function of gate and anode voltages. It was shown that the CNT emitters grown just up to the gate electrode height operated best in a triode mode. (C) 2002 American Institute of Physics.
引用
收藏
页码:2070 / 2072
页数:3
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