Low-threshold oxide-confined 1.3-μm quantum-dot laser

被引：41

作者：

Par, G ^{[1
]}

Shchekin, OB ^{[1
]}

Huffaker, DL ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 03期

基金：

美国国家科学基金会;

关键词：

1.3 mu m; laser measurements; laser resonators; quantum dots; semiconductor lasers;

D O I：

10.1109/68.826897

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data are presented on low threshold, 1.3-mu m oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm(2) is achieved with pup mounting at room temperature, For slightly larger devices the continuous-wave threshold current density is as low as 19 A/cm(2).

引用

页码：230 / 232

页数：3

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