Electronic transport in monolayer graphene nanoribbons produced by chemical unzipping of carbon nanotubes

被引：71

作者：

Sinitskii, Alexander ^{[1
]}

Fursina, Alexandra A. ^{[1
]}

Kosynkin, Dmitry V. ^{[1
]}

Higginbotham, Amanda L. ^{[1
]}

Natelson, Douglas ^{[2
]}

Tour, James M. ^{[1
,3
,4
,5
]}

机构：

[1] Rice Univ, Dept Chem, Houston, TX 77005 USA

[2] Rice Univ, Dept Elect & Comp Engn, Dept Phys & Astron, Houston, TX 77005 USA

[3] Rice Univ, Dept Comp Sci, Houston, TX 77005 USA

[4] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA

[5] Rice Univ, Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 25期

关键词：

GRAPHITE OXIDE; SHEETS; ROUTE; FILMS;

D O I：

10.1063/1.3276912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the structural and electrical properties of graphene nanoribbons (GNRs) produced by the oxidative unzipping of carbon nanotubes. GNRs were reduced by hydrazine at 95 degrees C and further annealed in Ar/H(2) at 900 degrees C; monolayer ribbons were selected for the fabrication of electronic devices. GNR devices on Si/SiO(2) substrates exhibit an ambipolar electric field effect typical for graphene. The conductivity of monolayer GNRs (similar to 35 S/cm) and mobility of charge carriers (0.5-3 cm(2)/V s) are less than the conductivity and mobility of pristine graphene, which could be explained by oxidative damage caused by the harsh H(2)SO(4)/KMnO(4) used to make GNRs. The resistance of GNR devices increases by about three orders of magnitude upon cooling from 300 to 20 K. The resistance/temperature data is consistent with the variable range hopping mechanism, which, along with the microscopy data, suggests that the GNRs have a nonuniform structure. (C) 2009 American Institute of Physics. [doi:10.1063/1.3276912]

引用

页数：3

共 25 条

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