Evidence of compensating centers as origin of yellow luminescence in GaN

被引：85

作者：

Schubert, EF ^{[1
]}

Goepfert, ID ^{[1
]}

Redwing, JM ^{[1
]}

机构：

[1] ATMI,DANBURY,CT 06810

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 22期

关键词：

D O I：

10.1063/1.120297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of the near-band edge and the yellow luminescence in n-type GaN grown by organometallic vapor-phase epitaxy is investigated as a function of doping concentration, The band edge and yellow luminescence intensify increase as the doping concentration is increased. However, the band-edge-to-yellow luminescence ratio does not change significantly as the doping concentration is increased by two orders of magnitude. A theoretical model based on rate equations is developed for the band-edge-to-yellow intensity ratio, Analysis of the experimental data in terms of the model reveals that the concentration of the level causing the yellow luminescence increases linearly with doping concentration, This dependence shows that the yellow luminescence is due to a compensating center. (C) 1997 American Institute of Physics.

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页码：3224 / 3226

页数：3

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