Raman study of silicon nanocrystals formed in SINx films by excimer laser or thermal annealing

被引:77
作者
Volodin, VA [1 ]
Efremov, MD [1 ]
Gritsenko, VA [1 ]
Kochubei, SA [1 ]
机构
[1] Russian Acad Sci, Inst Semicond Phys, SB, Novosibirsk 630090, Russia
关键词
D O I
10.1063/1.122130
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon nitride films of different stoichiometric composition were studied using Raman spectroscopy. A Raman signal due to Si-Si, Si-N bond vibrations in silicon nanoclusters was detected in as-deposited films. The appearance of Raman peaks in the range 493-514 cm(-1) after thermal and pulse laser treatments was interpreted as formation of silicon nanocrystals with sizes from 1.3 up to 5 nm depending on treatment parameters. Thermal treatment at 1200 degrees C allowed Si atom diffusion and its gathering in Si nanocrystals, meanwhile 5 ns pulse laser irradiation leads to crystallization of preexisting silicon nanoclusters inside the as-deposited SiNx films. (C) 1998 American Institute of Physics. [S0003-6951(98)03334-8].
引用
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页码:1212 / 1214
页数:3
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