Mechanism of B diffusion in crystalline Ge under proton irradiation

被引：40

作者：

Bruno, E. ^{[1
,2
]}

Mirabella, S. ^{[1
,2
]}

Scapellato, G. ^{[1
,2
]}

Impellizzeri, G. ^{[1
,2
]}

Terrasi, A. ^{[1
,2
]}

Priolo, F. ^{[1
,2
]}

Napolitani, E. ^{[3
,4
]}

De Salvador, D. ^{[3
,4
]}

Mastromatteo, M. ^{[3
,4
]}

Carnera, A. ^{[3
,4
]}

机构：

[1] Univ Catania, MATIS CNR INFM, I-95123 Catania, Italy

[2] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[3] Univ Padua, MATIS CNR INFM, I-35131 Padua, Italy

[4] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 03期

关键词：

ENHANCED DIFFUSION; BORON; GERMANIUM; SILICON; SI;

D O I：

10.1103/PhysRevB.80.033204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

B diffusion in crystalline Ge is investigated by proton irradiation in thin layers with B delta doping under different fluences (1 X 10(15)-10 X 10(15) H+/cm(2)), fluxes (6 X 10(11)-35 X 10(11) H+/cm(2) s), and temperatures of the implanted target (from - 196 to 550 degrees C), both during and after irradiation. B migration is enhanced by several orders of magnitude with respect to equilibrium. Moreover, B diffusion is shown to occur through a point-defect-mediated mechanism, compatible with a kick-out process. The diffusion mechanism is discussed. These results are a key point for a full comprehension of the B diffusion in Ge.

引用

页数：4

共 27 条

[1] Diffusion mechanisms and intrinsic: Point-defect properties in silicon [J].