The fabrication of a full metal AFM probe and its applications for Si and InP device analysis

被引:6
作者
Hantschel, T [1 ]
Trenkler, T [1 ]
Xu, M [1 ]
Vandervorst, W [1 ]
机构
[1] IMEC, B-3001 Louvain, Belgium
来源
MATERIALS AND DEVICE CHARACTERIZATION IN MICROMACHINING II | 1999年 / 3875卷
关键词
AFM; probe; metal tip; full metal probe;
D O I
10.1117/12.360457
中图分类号
TU [建筑科学];
学科分类号
0813 ;
摘要
Pyramidal metal tips which are fixed to a silicon cantilever have proven to be very powerful probe tips in electrical Atomic Force Microscopy (AFM). Although silicon is currently the cantilever material of choice for most applications, solid metal cantilevers are an interesting alternative due to their higher electrical conductivity and a more simplified fabrication procedure. Therefore, we have developed a process scheme for such full metal probes and evaluated them in AFM. This paper discusses the fabrication scheme in detail and presents first results concerning the application of the fabricated probes for semiconductor device analysis. Our experiments clearly show that operational full metal probes can be made on a large scale in a 150 mm silicon wafer technology. Using the optimized process, full metal probes can be fabricated which can compete in contact-mode AFM with pyramidal metal tips fixed to a silicon cantilever. Our work is currently focussing on further improvement of batch reproducibility.
引用
收藏
页码:20 / 31
页数:12
相关论文
共 18 条
[1]   Cross-sectional nano-spreading resistance profiling [J].
De Wolf, P ;
Clarysse, T ;
Vandervorst, W ;
Hellemans, L ;
Niedermann, P ;
Hanni, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01) :355-361
[2]   Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy [J].
De Wolf, P ;
Geva, M ;
Hantschel, T ;
Vandervorst, W ;
Bylsma, RB .
APPLIED PHYSICS LETTERS, 1998, 73 (15) :2155-2157
[3]  
DEWOLF P, IN PRESS J VAC SCI T
[4]   Dopant profile control and metrology requirements for sub-0.5 mu m metal-oxide-semiconductor field-effect transistors [J].
Duane, M ;
Nunan, P ;
terBeek, M ;
Subrahmanyan, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01) :218-223
[5]   Electroless plating of nickel on silicon for fabrication of high-aspect-ratio microstructures [J].
Furukawa, S ;
Mehregany, M .
SENSORS AND ACTUATORS A-PHYSICAL, 1996, 56 (03) :261-266
[6]   Characterization of silicon cantilevers with integrated pyramidal metal tips in atomic force microscopy [J].
Hantschel, T ;
Stephenson, R ;
Trenkler, T ;
De Wolf, P ;
Vandervorst, W .
DESIGN, TEST, AND MICROFABRICATION OF MEMS AND MOEMS, PTS 1 AND 2, 1999, 3680 :994-1005
[7]   Anisotropic etching of inverted pyramids in the sub-100 nm region [J].
Hantschel, T ;
Vandervorst, W .
MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :405-407
[8]   Fabrication and use of metal tip and tip-on-tip probes for AFM-based device analysis [J].
Hantschel, T ;
De Wolf, P ;
Trenkler, T ;
Stephenson, R ;
Vandervorst, W .
MATERIALS AND DEVICE CHARACTERIZATION IN MICROMACHINING, 1998, 3512 :92-103
[9]   ELECTROPLATED AND DRY-RELEASED METALLIC MICROSTRUCTURES FOR A LATERAL TUNNELING UNIT APPLICATION [J].
HIRANO, T ;
KOBAYASHI, D ;
FURUHATA, T ;
FUJITA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (02) :1202-1208
[10]   Phase transformations of silicon caused by contact loading [J].
Kailer, A ;
Gogotsi, YG ;
Nickel, KG .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :3057-3063