Polytype distribution in circumsteller silicon carbide

被引：57

作者：

Daulton, TL ^{[1
]}

Bernatowicz, TJ

Lewis, RS

Messenger, S

Stadermann, FJ

Amari, S

机构：

[1] USN, Marine Geosci Div, Res Lab, Stennis Space Ctr, MS 39529 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[3] Washington Univ, Space Sci Lab, St Louis, MO 63130 USA

[4] Univ Chicago, Enrico Fermi Inst, Chicago, IL 60637 USA

来源：

SCIENCE | 2002年 / 296卷 / 5574期

关键词：

D O I：

10.1126/science.1071136

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The inferred crystallographic class of circumstellar silicon carbide based on astronomical infrared spectra is controversial. We have directly determined the polytype distribution of circumstellar SiC from transmission electron microscopy of presolar silicon carbide from the Murchison carbonaceous meteorite. Only two polytypes (of a possible several hundred) were observed: cubic 3C and hexagonal 2H silicon carbide and their intergrowths. We conclude that this structural simplicity is a direct consequence of the low pressures in circumstellar outflows and the corresponding low silicon carbide condensation temperatures.

引用

页码：1852 / 1855

页数：4

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