PROGRESS IN EPITAXIAL-GROWTH OF SIC

被引：52

作者：

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90215-R

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Recent progress in epitaxial growth of SiC in the author's group is surveyed. Growth of 3C-SiC on a Si substrate, a typical success in heteroepitaxial growth with large lattice mismatch, is briefly reviewed. Step-controlled epitaxy of 6H-SiC, which the author's group named and which is a key technology for future development, is discussed in detail. The growth mechanism and effects of off-direction and off-angle are described. An electrostatic model for explaining polytype inheritance in SiC is proposed. As an advanced epitaxial growth, atomic layer epitaxy in SiC crystal growth by gas source molecular beam epitaxy is given.

引用

页码：65 / 74

页数：10

共 23 条

[1] Campbell R. B., 1971, SEMICONDUCT SEMIMET, V7, P625
[2] STRUCTURE OF THE (100) FACE OF CUBIC SILICON-CARBIDE
CARTER, JN
[J]. SOLID STATE COMMUNICATIONS, 1989, 72 (07) : 671 - 674
[3] THE BETA-SIC(100) SURFACE STUDIED BY LOW-ENERGY ELECTRON-DIFFRACTION, AUGER-ELECTRON SPECTROSCOPY, AND ELECTRON-ENERGY LOSS SPECTRA
DAYAN, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (01): : 38 - 45
[4] ATOMIC LAYER EPITAXY OF CUBIC SIC BY GAS SOURCE MBE USING SURFACE SUPERSTRUCTURE
FUYUKI, T
NAKAYAMA, M
YOSHINOBU, T
SHIOMI, H
MATSUNAMI, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 461 - 463
[5] ELEMENTAL COMPOSITION OF BETA-SIC(001) SURFACE PHASES STUDIED BY MEDIUM ENERGY ION-SCATTERING
HARA, S
SLIJKERMAN, WFJ
VANDERVEEN, JF
OHDOMARI, I
MISAWA, S
SAKUMA, E
YOSHIDA, S
[J]. SURFACE SCIENCE, 1990, 231 (03) : L196 - L200
[6] KIMOTO T, 1993, J APPL PHYS, V73
[7] Kuroda N., 1987, 19 C SOL STAT DEV MA, P227
[8] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES
MATSUNAMI, H
NISHINO, S
ONO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236
[9] MATSUNAMI H, 1990, P MATER RES SOC S, V162, P397
[10] Matsunami H., 1987, OPTOELECTRON DEVICES, V2, P29

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