STRUCTURE OF THE (100) FACE OF CUBIC SILICON-CARBIDE

被引：6

作者：

CARTER, JN ^{[1
]}

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

来源：

SOLID STATE COMMUNICATIONS | 1989年 / 72卷 / 07期

关键词：

D O I：

10.1016/0038-1098(89)90671-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：671 / 674

页数：4

共 13 条

[1]

[Anonymous], ELECTRONIC STRUCTURE

[2] CHEMISORPTION OF ATOMIC AND MOLECULAR-OXYGEN ON THE (100) SURFACE OF SILICON - A THEORETICAL-STUDY [J].

BARONE, V ;

LELJ, F ;

RUSSO, N ;

TOSCANO, M .

SURFACE SCIENCE, 1985, 162 (1-3) :230-238

[3]

CARTER JN, 1987, SURF SCI, V188, pL723, DOI 10.1016/S0039-6028(87)80186-3

[4] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065

[5] THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1984, 29 (02) :785-792

[6] THE BETA-SIC(100) SURFACE STUDIED BY LOW-ENERGY ELECTRON-DIFFRACTION, AUGER-ELECTRON SPECTROSCOPY, AND ELECTRON-ENERGY LOSS SPECTRA [J].

DAYAN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (01) :38-45

[7]

DAYAN M, 1985, J VAC SCI TECHNOL A, V3, P361, DOI 10.1116/1.573221

[8]

DWYER VM, 1988, SPRINGER SERIES SURF, V11, P320

[9] COULOMB INTERACTIONS IN SEMICONDUCTORS AND INSULATORS [J].

HARRISON, WA .

PHYSICAL REVIEW B, 1985, 31 (04) :2121-2132

[10] SURFACE-STRUCTURES OF BETA-SIC AND PSEUDOMORPHIC SI ADLAYERS [J].

KAPLAN, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :829-830

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