Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars

被引:26
作者
Xia, R [1 ]
Larkins, EC
Harrison, I
Dods, SRA
Andrianov, A
Morgan, J
Landesman, JP
机构
[1] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England
[2] Thomson CSF, Cent Rech Lab, F-91404 Orsay, France
关键词
failure analysis; laser reliability; photoluminescence microscopy; reliability testing; semiconductor device reliability; semiconductor lasers; strain; stress;
D O I
10.1109/LPT.2002.1012376
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new detailed approach has been developed, whereby the individual performances of the emitters comprising a laser bar are assessed separately as part of a larger coupled system. The results reveal the existence of a strain threshold, wherefore degradation of the emitter performances is only observed when the local packaging-induced strain is above a certain critical value. This degradation which occurs after aging, is manifested in an increase in the "apparent" threshold current and a decrease in the "apparent" slope efficiency of the individual emitters. This degradation is also revealed by the presence of facet defects as previously reported. These results suggest that measurement and control of packaging-induced strain will allow significant improvement in the degradation behavior of high-power AlGaAs laser bars.
引用
收藏
页码:893 / 895
页数:3
相关论文
共 15 条
[1]   Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes [J].
Andrianov, AV ;
Dods, SRA ;
Morgan, J ;
Orton, JW ;
Benson, TM ;
Harrison, I ;
Larkins, EC ;
Daiminger, FX ;
Vassilakis, E ;
Hirtz, JP .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) :3227-3233
[2]   Sulphur passivation of dry-etched AlGaAs laser facets [J].
Collot, P ;
Delalande, S ;
Olivier, J .
ELECTRONICS LETTERS, 1999, 35 (06) :506-508
[3]   Numerical simulation of broad-area high-power semiconductor laser amplifiers [J].
Dai, Z ;
Michalzik, R ;
Unger, P ;
Ebeling, KJ .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (12) :2240-2254
[4]  
Frigeri C, 1998, INST PHYS CONF SER, V160, P483
[5]  
FUKUDA M, 1991, RELIABILITY DEGRADAT, P309
[6]   LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE [J].
HERSEE, S ;
BALDY, M ;
ASSENAT, P ;
DECREMOUX, B ;
DUCHEMIN, JP .
ELECTRONICS LETTERS, 1982, 18 (14) :618-620
[7]  
HOLANYAK N, 1980, IEEE J QUANTUM ELECT, V16, P170
[8]   REVEALING PROCESS-INDUCED STRAIN FIELDS IN GAAS/ALGAAS LASERS VIA ELECTRON-IRRADIATION IN A SCANNING ELECTRON-MICROSCOPE [J].
JAKUBOWICZ, A .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) :1800-1805
[9]  
KRESSEL H, 1977, SEMICONDUCTOR LASERS, P555
[10]  
LARKINS EC, 1995, IEEE PHOTONIC TECH L, V7, P1619