Electronic growth of Pb islands on Si(111) at low temperature

被引：56

作者：

Chang, SH ^{[1
]}

Su, WB

Jian, WB

Chang, CS

Chen, LJ

Tsong, TT

机构：

[1] Acad Sinica, Inst Phys, Taipei, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[3] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.65.245401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of Pb films on the Si(111)7x7 surface has been investigated at low temperatures using scanning tunneling microscopy. Flat-top Pb islands are formed and at low coverage the thickness of islands is confined in the range of four to nine atomic layers. Among these islands, those of seven-layer height are the most abundant. In low coverage limit, these multilayer islands prefer to grow in size instead of in thickness, showing a quasi-two-dimensional growth property. This growth behavior, different from the conventional growth modes, arises from the quantum size effect. At higher coverage, the growth also reveals layer-by-layer behavior. The Arrhenius plot of the island density versus temperature shows a linear relationship, indicating the formation of islands can be explained by the nucleation and growth theory. We also study the growth of Pb films on the incommensurate Pb/Si(111) surface at low temperatures. Flat Pb islands can be grown as well, but the threshold thickness is reduced to two atomic layers instead of four.

引用

页码：1 / 6

页数：6

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