Ge quantum dots in anomalous thick native germanium oxide layers

被引：2

作者：

Gorokhov, EB ^{[1
]}

Volodin, VA ^{[1
]}

Marin, DV ^{[1
]}

Shvets, VA ^{[1
]}

Borisov, AG ^{[1
]}

机构：

[1] SB RAS, Inst Semicond Phys, Novosibirsk, Russia

来源：

2004 INTERNATIONAL SIBERIAN WORKSHOPS AND TUTORIALS ON ELECTRON DEVICES AND MATERIALS, EDM 2004, PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/PESC.2004.241016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An anomalous thick (up to 500 nm) native gemanium oxide layers (GeOx:(H2O)) with Ge nanoclusters were studied using photoluntinescence (PL) and ellipsometry spectroscopy techniques. Room temperature PL signal in yellow-green spectral region, as supposed, from Ge nanoclusters was observed.

引用

页码：37 / 39

页数：3

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