Atomic and electronic structure of the nonpolar GaN(1(1)over-bar00) surface

被引：63

作者：

Bertelli, M. ^{[1
]}

Loeptien, P. ^{[1
]}

Wenderoth, M. ^{[1
]}

Rizzi, A. ^{[1
]}

Ulbrich, R. G. ^{[1
]}

Righi, M. C. ^{[2
,3
]}

Ferretti, A. ^{[2
,3
]}

Martin-Samos, L. ^{[2
,3
]}

Bertoni, C. M. ^{[2
,3
]}

Catellani, A. ^{[4
]}

机构：

[1] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany

[2] Univ Modena & Reggio Emilia, CNR, INFM, Natl Ctr NanoStruct & BioSyst Surfaces S3, I-41100 Modena, Italy

[3] Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy

[4] CNR, IMEM, I-43100 Parma, Italy

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 11期

关键词：

SCANNING TUNNELING MICROSCOPE; LIGHT-EMITTING-DIODES; GAN; SPECTROSCOPY; SEMICONDUCTORS; MODEL;

D O I：

10.1103/PhysRevB.80.115324

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a cross-section scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) and ab initio density-functional theory simulations study of the cleaved nonpolar (1 (1) over bar 00) surface (m-plane) of n-type HVPE GaN free-standing quasisubstrates. Atomically resolved empty and filled states STM topographies show that no reconstruction occurs upon cleavage, as predicted by theory. STS measurements on clean and atomically flat cleaved surfaces (defect concentration sigma(d) <= 2 x 10(12) cm(-2)) show that the Fermi energy is not pinned and the tunneling current flows through Ga-like electronic states lying outside the fundamental band gap. On surface areas with defect concentration sigma(d) > 3 x 10(13) cm(-2), the Fermi energy is pinned inside the band gap in defect-derived surface states and tunneling through filled (empty) N-like (Ga-like) states takes place.

引用

页数：7

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