Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation

被引：37

作者：

Dhara, S

Datta, A

Wu, CT

Lan, ZH

Chen, KH

Wang, YL

Hsu, CW

Shen, CH

Chen, LC ^{[1
]}

Chen, CC

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[2] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan

[3] Natl Taiwan Normal Univ, Dept Chem, Taipei 116, Taiwan

[4] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 26期

关键词：

D O I：

10.1063/1.1760593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hexagonal to cubic phase transformation is studied in focused ion beam assisted Ga+-implanted GaN nanowires. Optical photoluminescence and cathodoluminescence studies along with high-resolution transmission electron microscopic structural studies are performed to confirm the phase transformation. In one possibility, sufficient accumulation of Ga from the implanted source might have reduced the surface energy and simultaneously stabilized the cubic phase. Another potential reason may be that the fluctuations in the short-range order induced by enhanced dynamic annealing (defect annihilation) with the irradiation process stabilize the cubic phase and cause the phase transformation. (C) 2004 American Institute of Physics.

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页码：5473 / 5475

页数：3

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