Performance recovery and optimization of poly(3-hexylthiophene) transistors by thermal cycling

被引：20

作者：

Mattis, Brian A. ^{[1
]}

Chang, Paul C. ^{[1
]}

Subramanian, Vivek ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94702 USA

来源：

SYNTHETIC METALS | 2006年 / 156卷 / 18-20期

关键词：

poly(3-hexylthiophene); oxygen doping; organic; annealing; performance recovery;

D O I：

10.1016/j.synthmet.2006.09.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present the results of studies on the electrical and physical modifications to poly(3-hexylthiophene), upon thermal annealing. Thermally induced performance enhancements and thermal stability of polythiophene thin film transistors (TFTs) are explored. We observe substantial mobility improvements in devices annealed at low temperatures (< 80 degrees C), as well as increases in on/off ratios by more than two orders of magnitude at moderate anneal temperatures (similar to 120 degrees C). We document changes in conductivity, mobility, on current, and on/off ratio with anneal temperature and total thermal budget. We are able to show the expulsion of environmental contaminants and increases in film density as means to performance recovery and enhancement. This study provides a comprehensive analysis of the effect of thermal cycling of polythiophene TFTs on various device performance metrics, and identifies relevant thermal limits and failure mechanisms. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1241 / 1248

页数：8

共 27 条

[11] Humidity effect on electrical performance of organic thin-film transistors [J].

Li, DW ;

Borkent, EJ ;

Nortrup, R ;

Moon, H ;

Katz, H ;

Bao, ZN .

APPLIED PHYSICS LETTERS, 2005, 86 (04) :042105-1

[12] Study of switching characteristic with positive temperature coefficient of poly(3-hexylthiophene) [J].

Liu, YW ;

Oshima, K ;

Yamauchi, T ;

Shimomura, M ;

Miyauchi, S .

SYNTHETIC METALS, 1999, 101 (1-3) :451-452

[13]

Mattis BA, 2003, MATER RES SOC SYMP P, V771, P369

[14] Dopant density determination in disordered organic field-effect transistors [J].

Meijer, EJ ;

Detcheverry, C ;

Baesjou, PJ ;

van Veenendaal, E ;

de Leeuw, DM ;

Klapwijk, TM .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) :4831-4835

[15]

Molesa S., 2003, Materials Research Society Symposium Proceedings, V769, pH3.1

[16]

Moore SK, 2002, IEEE SPECTRUM, V39, P55, DOI 10.1109/MSPEC.2002.1030969

[17] Photoinduced doping effect of pentacene field effect transistor in oxygen atmosphere studied by displacement current measurement [J].

Ogawa, S ;

Naijo, T ;

Kimura, Y ;

Ishii, H ;

Niwano, M .

APPLIED PHYSICS LETTERS, 2005, 86 (25) :1-3

[18] H2O effect on the stability of organic thin-film field-effect transistors [J].

Qiu, Y ;

Hu, YC ;

Dong, GF ;

Wang, LD ;

Xie, JF ;

Ma, YN .

APPLIED PHYSICS LETTERS, 2003, 83 (08) :1644-1646

[19] Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator [J].

Scheinert, S ;

Paasch, G ;

Schrödner, M ;

Roth, HK ;

Sensfuss, S ;

Doll, T .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :330-337

[20]

SHERAW C, 2001, IEEE DEVICE RES JUN, P181

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