Electrodynamics of a Coulomb glass in n-type silicon -: art. no. 246601

Measurements of the complex frequency dependent conductivity of uncompensated n-type silicon are reported. The experiments are done in the quantum limit, (h) over bar omega>k(B)T, across a broad doping range on the insulating side of the metal-insulator transition. The low energy linear frequency dependence is consistent with theories of a Coulomb glass, but discrepancies exist in the relative magnitudes of the complex components. At higher energies we observe a crossover to a quadratic frequency dependence that is sharper than expected. The concentration dependence gives evidence that the Coulomb interaction energy is the energy scale that determines this crossover.