Investigation of structural and ferroelectric properties of pulsed-laser-ablated epitaxial Nd-doped bismuth titanate films

被引：39

作者：

Garg, A

Snedden, A

Lightfoot, P

Scott, JF

Hu, X

Barber, ZH

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Univ St Andrews, Sch Chem, St Andrews KY16 9ST, Fife, Scotland

[3] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 06期

关键词：

D O I：

10.1063/1.1766097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lanthanide doped bismuth titanate films have been shown to exhibit excellent fatigue resistance and higher remanent polarization than SrBi2Ta2O9 films. In this paper we report on the detailed investigation of structural and ferroelectric properties of Nd-doped Bi4Ti3O12 (BNdT) films grown by pulsed laser ablation. Highly epitaxial 300 nm thick (001)-, (118)-, and (104)-oriented BNdT films were deposited on SrRuO3 buffered SrTiO3 substrates of (100), (110), and (111) orientations, respectively. The highest remanent polarization (2P(r)) of similar to40 muC/cm(2) was observed in the (104)-oriented films at a coercive field of similar to50 kV/cm. Leakage currents of the films were of the order of 10(-6)-10(-5) A/cm(2) with (104)-oriented films showing improved behavior. The films showed good fatigue resistance upon bipolar switching up to 10(9) cycles. (C) 2004 American Institute of Physics.

引用

页码：3408 / 3412

页数：5

共 23 条

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