Layered perovskites with giant spontaneous polarizations for nonvolatile memories

被引：402

作者：

Chon, U

Jang, HM ^{[1
]}

Kim, MG

Chang, CH

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Natl Res Lab Ferroelect Phase Transit, Pohang 790784, South Korea

[3] Res Inst Ind Sci & Technol, Pohang 790330, South Korea

[4] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.89.087601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A series of titanate-based layered perovskites having large values of the spontaneous polarization P-s were developed for their applcations to nonvolatile ferroelectric random access memories. Among these, the Nd-modified bismuth titanate [Bi4-xNdxTi3O12 (BNdT)] system exhibited the most remarkable ferroelectric properties. The c-axis oriented BNdT capacitor was characterized by a switchable remanent polarization 2P(r) of over 100 muC/cm(2) and imprinting and fatigue-free behavior. The active Ti site responsible for the giant P-s was identified with the help of Rietveld analysis, x-ray absorption near-edge structure study, and ab initio quantum computations.

引用

页码：1 / 087601

页数：4

共 17 条

[1] INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2/PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES [J].