Fullerene (C-60) adsorption and films growth on the (root 3x root 3) and (3x3) surface of 6H SiC(0001)

被引：2

作者：

Li, L ^{[1
]}

Hasegawa, Y ^{[1
]}

Shinohara, H ^{[1
]}

Sakurai, T ^{[1
]}

机构：

[1] NAGOYA UNIV,DEPT CHEM,NAGOYA,AICHI 46401,JAPAN

来源：

JOURNAL DE PHYSIQUE IV | 1996年 / 6卷 / C5期

关键词：

D O I：

10.1051/jp4:1996528

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling microscopy (STM) was used to study the C-60 adsorption on the Si rich (3x3) and C rich (root 3x root 3) surface of 6H-SiC(0001). At room temperature, triangular or hexagonal islands commensurating to the substrate structure at submonlayer coverages were observed. One of the interesting observations was the multilayer growth of C-60 with the close-packed fcc(111) structure was observed: while on the (root 3x root 3) surface, for coverage higher than 1 ML, disordered surface morphology was observed. Epitaxial growth of SIC was also achieved using C-60 as carbon source on 6H-SiC(0001) surfaces.

引用

页码：173 / 177

页数：5

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