Room-temperature low-dimensional effects in Pi-gate SOI MOSFETs

被引：18

作者：

Colinge, J. P. ^{[1
]}

Xiong, Weize

Cleavelin, C. R.

Schulz, T.

Schruefer, K.

Matthews, K.

Patruno, P.

机构：

[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA

[2] Texas Instruments Inc, Dallas, TX 75243 USA

[3] Infineon Technol, D-85579 Neubiberg, Germany

[4] ATDF Inc, Austin, TX 78741 USA

[5] SOITEC SA, F-38190 Bernin, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 09期

关键词：

D O I：

10.1109/LED.2006.881086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

Evidence of a one-dimensional subband formation is found in Pi-gate SOI MOSFETs at room temperature as oscillations are found in the I-D (V-G) characteristics. These oscillations correspond to an intersubband scattering. Even though the height-to-width ratio of the silicon fins is equal to five, the device behavior is better described by a one-dimensional semiconductor theory than by a two-dimensional gas model.

引用

页码：775 / 777

页数：3

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