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Quantum-mechanical effects in trigate SOI MOSFETs

被引：125
作者：
Colinge, JP [1 ]
Alderman, JC
Xiong, WZ
Cleavelin, CR
机构：
[1] Tyndall Natl Inst, Cork, Ireland
[2] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
[3] Texas Instruments Inc, SiTD, Dallas, TX 75243 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 05期
基金：
爱尔兰科学基金会;
关键词：
MOSFETs; quantum wires; semiconductor device modeling; silicon-on-insulator (SOI) technology;
D O I：
10.1109/TED.2006.871872
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 [电气工程]; 0809 [电子科学与技术];
摘要：
A self-consistent Poisson-Schrddinger solver is used to calculate the current in trigate n-channel silicon-on-insulator transistors with sections down to 2 mn x 2 nm. The minimum energy of the subbands and the threshold voltage increase as the cross-sectional area of the device is reduced and as the electron concentration in the channel is increased. As a consequence, the threshold voltage is higher than predicted by classical Poisson solvers. The current drive is diminished, and the subthreshold slope is degraded, especially in the devices with the smallest cross sections.
引用
收藏
页码：1131 / 1136
页数：6
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