Pulsed laser deposition of CNx films:: role of r.f. nitrogen plasma activation for the film structure formation

被引：6

作者：

Bulir, J

Novotny, M

Jelínek, M

Lancok, J

Zelinger, Z

Trchová, M

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic

[2] Acad Sci Czech Republ, Inst Phys Chem, Prague 18223 8, Czech Republic

[3] Charles Univ Prague, Dept Macromol Phys, Fac Math & Phys, CR-18000 Prague 8, Czech Republic

来源：

DIAMOND AND RELATED MATERIALS | 2002年 / 11卷 / 3-6期

关键词：

laser; spectroscopy; radio frequency (r.f.); C3N4;

D O I：

10.1016/S0925-9635(01)00587-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin CNx films were deposited by pulsed laser deposition (PLD) equipped with KrF excimer laser. An additional radio-frequency discharge of the nitrogen gas was applied. The role of atomic nitrogen in CN radical formation was studied using optical emission spectroscopy (OES). The composition of the films was measured by WDX. The N/C ratio of all films was approximately 1 and did not vary greatly with nitrogen pressure. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：1223 / 1226

页数：4

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