CNx films created by combined laser deposition and r.f. discharge:: XPS, FTIR and Raman analysis

被引:37
作者
Jelínek, M
Zemek, J
Trchová, M
Vorlícek, V
Lancok, J
Tomov, R
Simecková, M
机构
[1] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
[2] Charles Univ, Fac Math & Phys, Dept Macromol Phys, CR-18000 Prague 8, Czech Republic
[3] Bulgarian Acad Sci, Inst Elect, BU-1784 Sofia, Bulgaria
关键词
laser; deposition process; infrared spectroscopy; Raman scattering; X-ray photoelectron spectroscopy;
D O I
10.1016/S0040-6090(00)00853-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin CNx films were deposited by combination of KrF pulse laser deposition with additional radio frequency discharge (13.56 MHz). Nitrogen pressure was changed from 1 to 40 Pa and the r.f. power was adjusted to 100 W. N/C ratio in films higher than 1.1 was measured by wavelength dispersive X-ray analysis. Films were amorphous. Microhardness from 2 to 9 GPa and adhesion to silicon substrate from 5 to 19 N were found. The X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and Raman spectral studies indicate N-sp(3) C, N-sp(2) C and N-sp C bondings of nitrogen atoms with respect to carbon and the presence of N-H groups. The presence of different amorphous, crystalline and polymer-like phases is discussed. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:69 / 76
页数:8
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