First principles calculation of effective mass parameters of GaN

被引:38
作者
Suzuki, M
Uenoyama, T
机构
[1] Matsushita Electric Industrial Co, Ltd, Kyoto, Japan
关键词
D O I
10.1016/S0038-1101(96)00227-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
First principles electronic band calculations are performed for the wurtzite and zincblende GaN, by using a full-potential linearized augmented plane wave method. In order to clarify the difference of electronic properties between two kinds of crystal structures, and to give important information on the characteristic analysis of GaN-based quantum well devices, the Luttinger-like valence band parameters, as well as the electron and hole effective masses and splitting energies, are derived from the calculated band structures with the assistance of the k . p theory, considering the cubic and hexagonal symmetries. The small spin-orbit coupling of a nitrogen makes us use the 6 x 6 k . p Hamiltonians for both structures in the analysis of the valence band states. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:271 / 274
页数:4
相关论文
共 13 条
[1]  
Akasaki I, 1992, I PHYS C SER, V129, P851
[2]  
BIR GL, 1972, SYMMETRY STRAIN INDU, P329
[3]   ELECTRONIC AND STRUCTURAL-PROPERTIES OF GAN BY THE FULL-POTENTIAL LINEAR MUFFIN-TIN ORBITALS METHOD - THE ROLE OF THE D-ELECTRONS [J].
FIORENTINI, V ;
METHFESSEL, M ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1993, 47 (20) :13353-13362
[4]   EXCHANGE AND CORRELATION IN ATOMS, MOLECULES, AND SOLIDS BY SPIN-DENSITY FUNCTIONAL FORMALISM [J].
GUNNARSSON, O ;
LUNDQVIST, BI .
PHYSICAL REVIEW B, 1976, 13 (10) :4274-4298
[5]   OPTICAL GAIN CALCULATION OF WURTZITE GAN/ALGAN QUANTUM-WELL LASER [J].
KAMIYAMA, S ;
OHNAKA, K ;
SUZUKI, M ;
UENOYAMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (7A) :L821-L823
[6]   ELECTRONIC-STRUCTURE OF GAN WITH STRAIN AND PHONON DISTORTIONS [J].
KIM, K ;
LAMBRECHT, WRL ;
SEGALL, B .
PHYSICAL REVIEW B, 1994, 50 (03) :1502-1505
[7]   MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J].
LUTTINGER, JM ;
KOHN, W .
PHYSICAL REVIEW, 1955, 97 (04) :869-883
[8]   PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].
MARUSKA, HP ;
TIETJEN, JJ .
APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&
[9]   HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES [J].
NAKAMURA, S ;
MUKAI, T ;
SENOH, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L1998-L2001
[10]   FIRST-PRINCIPLES CALCULATIONS OF EFFECTIVE-MASS PARAMETERS OF ALN AND GAN [J].
SUZUKI, M ;
UENOYAMA, T ;
YANASE, A .
PHYSICAL REVIEW B, 1995, 52 (11) :8132-8139