Work function and energy levels of positrons in elemental semiconductors

被引:6
作者
Bouarissa, N
Abbar, B
Dufour, JP
Amrane, N
Aourag, H
机构
[1] UNIV SIDI BEL ABBES,DEPT PHYS,COMPUTAT MAT SCI LAB,SIDI BEL ABBES 22000,ALGERIA
[2] UNIV SETIF,DEPT PHYS,SETIF 19000,ALGERIA
[3] UNIV BOURGOGNE,PHYS SOLIDE LAB,F-21000 DIJON,FRANCE
关键词
positrons; elemental semiconductors; work functions;
D O I
10.1016/0254-0584(96)80067-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the behaviour of the positron in diamond, silicon and germanium by calculating its energy levels at different points of the reciprocal space using the pseudopotential approach coupled with the independent particle approximation. These energies determine quantities, such as the positron and positronium work functions and the deformation potentials, which are important parameters in slow-positron-beam experiments. We have tentatively estimated the positron diffusion constant in these semiconductors. The results are compared to values extracted from experiments.
引用
收藏
页码:267 / 272
页数:6
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