Defects-induced volume deviations in ZnSe

被引：4

作者：

Ebe, H

Sakurai, F

Chen, ZQ

Uedono, A

Zhang, BP

Segawa, Y

Suto, K

Nishizawa, J

机构：

[1] Telecommun Advancement Org Japan, Sendai Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan

[2] Semicond Res Fdn, Semicond Res Inst, Aoba Ku, Sendai, Miyagi 9800862, Japan

[3] Tohoku Univ, Grad Sch Engn, Dept Mat Sci & Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[5] RIKEN, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

关键词：

defects; semiconducting II-VI materials; light emitting diodes;

D O I：

10.1016/S0022-0248(01)02372-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Volume deviations of defects-induced ZnSe crystals were investigated using X-ray diffraction. Point defects were introduced due to annealing stoichiometric ZnSe in Zn or Se ambience. The lattice constant of the sample annealed in Se ambience decreased with deviation rates of 10(-5). On the other hand, the deviations for the sample annealed in Zn were small within the errors. Positron annihilation experiments showed that vacancy-type defects increased in the former whereas no increase was observed in the latter. The vacancy could induce crystals to shrink. The results suggest that tensile stresses would suppress generations of vacancies. The defect properties were discussed using photoluminescence spectra and secondary ion mass spectrometry. The Se-annealed samples would involve a self-activated (SA) center consisting of Zn-vacancy and Li-interstitial. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1566 / 1569

页数：4

共 15 条

[1] Influence of p-type doping on the degradation of ZnSe laser diodes
Albert, D
Nürnberger, J
Hock, V
Ehinger, M
Faschinger, W
Landwehr, G
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (14) : 1957 - 1959
[2] Behringer M, 1998, J CRYST GROWTH, V184, P580
[3] Universal curves for optical power degradation of II-VI light-emitting diodes
Chuang, SL
Ukita, M
Kijima, S
Taniguchi, S
Ishibashi, A
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (11) : 1588 - 1590
[4] Green II-VI light emitting diodes with long lifetime on InP substrate
Faschinger, W
Nürnberger, J
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (02) : 187 - 189
[5] DEGRADATION OF II-VI BASED BLUE-GREEN LIGHT EMITTERS
GUHA, S
DEPUYDT, JM
HAASE, MA
QIU, J
CHENG, H
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (23) : 3107 - 3109
[6] ROLE OF STACKING-FAULTS AS MISFIT DISLOCATION SOURCES AND NONRADIATIVE RECOMBINATION CENTERS IN II-VI HETEROSTRUCTURES AND DEVICES
GUHA, S
DEPUYDT, JM
QIU, J
HOFLER, GE
HAASE, MA
WU, BJ
CHENG, H
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (22) : 3023 - 3025
[7] Stability of nitrogen in ZnSe and its role in the degradation of ZnSe lasers
Gundel, S
Albert, D
Nürnberger, J
Faschinger, W
[J]. PHYSICAL REVIEW B, 1999, 60 (24) : R16271 - R16274
[8] MICROSTRUCTURE STUDY OF A DEGRADED PSEUDOMORPHIC SEPARATE-CONFINEMENT HETEROSTRUCTURE BLUE-GREEN LASER-DIODE
HUA, GC
OTSUKA, N
GRILLO, DC
FAN, Y
HAN, J
RINGLE, MD
GUNSHOR, RL
HOVINEN, M
NURMIKKO, AV
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (11) : 1331 - 1333
[9] Significant progress in II-VI blue-green laser diode lifetime
Kato, E
Noguchi, H
Nagai, M
Okuyama, H
Kijima, S
Ishibashi, A
[J]. ELECTRONICS LETTERS, 1998, 34 (03) : 282 - 284
[10] Review of defect investigations by means of positron annihilation in II-VI compound semiconductors
Krause-Rehberg, R
Leipner, HS
Abgarjan, T
Polity, A
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (06): : 599 - 614

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