Tapping mode capacitance microscopy

被引：13

作者：

Goto, K

Hane, K

机构：

[1] Dept. of Mechatronics and Prec. Eng., Tohoku University

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1997年 / 68卷 / 01期

关键词：

ATOMIC-FORCE MICROSCOPY; SURFACE; RESOLUTION; POTENTIOMETRY; SCALE;

D O I：

10.1063/1.1147749

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present a new technique for microscopic capacitance measurements. Capacitance microscopy is combined with tapping mode force microscopy. The tapping motion is successfully used for the capacitance modulation and also for the tip-sample distance regulation. Furthermore, capacitive and topographic images are simultaneously obtained. The technique was applied to observations of a gratinglike electrode and of a nitride-oxide-silicon structure for a nonvolatile memory. (C) 1997 American Institute of Physics.

引用

收藏

页码：120 / 123

页数：4

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