Modulating the thickness of the resist pattern for controlling size and depth of submicron reversed domains in lithium niobate

被引：15

作者：

Ferraro, P. ^{[1
]}

Grilli, S. ^{[1
]}

机构：

[1] CNR, INOA, I-80078 Pozzuoli, NA, Italy

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 13期

关键词：

D O I：

10.1063/1.2357928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter the electric field overpoling is used in combination with two-dimensional resist gratings exhibiting modulated topography and obtained by moire interference lithography. The technique allows one to fabricate shallow submicron domains with lateral size and depth modulated according to the resist profile. Simulations of the electric field distribution in the crystal, in this specific poling configuration, are performed to interpret the mechanism leading to the formation of those surface domains. The results show that in principle complex domain structures could be designed for applications in the field of photonic crystals. (c) 2006 American Institute of Physics.

引用

页数：3

共 13 条

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