Formation of the charge selective contact in solar cells with extremely thin absorber based on ZnO-nanorod/In2S3/CuSCN

被引：29

作者：

Dittrich, T. ^{[1
]}

Kieven, D. ^{[1
]}

Belaidi, A. ^{[1
]}

Rusu, M. ^{[1
]}

Tornow, J. ^{[1
]}

Schwarzburg, K. ^{[1
]}

Lux-Steiner, M. Ch. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, Solarenergieforsch SE, D-14109 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 03期

关键词：

annealing; copper compounds; diodes; III-VI semiconductors; II-VI semiconductors; indium compounds; nanostructured materials; solar cells; surface diffusion; thermoelectricity; zinc compounds; FILMS;

D O I：

10.1063/1.3077259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Annealed and not-annealed solar cells with extremely thin absorber based on ZnO-nanorod /In2S3/CuSCN structures have been compared. Significantly higher external quantum efficiencies have been recorded on annealed devices. The temperature dependent current-voltage characteristics in the dark and under illumination were analyzed in detail. The short-circuit current density increased with the temperature and depended on the light intensity by a power law with a power coefficient of 0.85 that was independent of the annealing or measurement temperature. The temperature dependence of the ideality factor dominated the temperature dependencies of the diode saturation current density and of the open circuit voltage. The activation energies increased strongly after annealing. We propose that the limiting charge selective contact is driven away from the highly defective In2S3/CuSCN interface into the In2S3 layer due to stimulated by the annealing Cu diffusion.

引用

页数：6

共 20 条

[1] Microstructural and chemical studies of interfaces between Cu(In,Ga)Se2 and In2S3 layers -: art. no. 084908 [J].

Abou-Ras, D ;

Rudmann, D ;

Kostorz, G ;

Spiering, S ;

Powalla, M ;

Tiwari, AN .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)

[2] Indium sulfide thin films deposited by the spray ion layer gas reaction technique [J].

Allsop, N. A. ;

Schoenmann, A. ;

Belaidi, A. ;

Muffler, H. -J. ;

Mertesacker, B. ;

Bohne, W. ;

Strub, E. ;

Roehrich, J. ;

Lux-Steiner, M. C. ;

Fischer, Ch. -H. .

THIN SOLID FILMS, 2006, 513 (1-2) :52-56

[3]

BELAIDI A, UNPUB

[4]

BELAIDI A, SOL ENERGY IN PRESS

[5] Influence of the local absorber layer thickness on the performance of ZnO nanorod solar cells [J].

Belaidi, Abdelhak ;

Dittrich, Thomas ;

Kieven, David ;

Tornow, Julian ;

Schwarzburg, Klaus ;

Lux-Steiner, Martha .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2008, 2 (04) :172-174

[6] Barrier lowering in dye-sensitized porous-TiO2 solar cells [J].

Dittrich, T ;

Beer, P ;

Koch, F ;

Weidmann, J ;

Lauermann, I .

APPLIED PHYSICS LETTERS, 1998, 73 (13) :1901-1903

[7] Current-voltage characteristics and transport mechanism of solar cells based on ZnO nanorods/In2S3/CuSCN [J].

Dittrich, T. ;

Kieven, D. ;

Rusu, M. ;

Belaidi, A. ;

Tornow, J. ;

Schwarzburg, K. ;

Lux-Steiner, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (05)

[8] Solar cell with extremely thin absorber on highly structured substrate [J].

Ernst, K ;

Belaidi, A ;

Könenkamp, R .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (06) :475-479

[9] Ultra-thin charge selective systems based on MeSxHy (Me = In, Cu, Pb) [J].

Gavrilov, S. ;

Dittrich, Th. ;

Lim, B. ;

Belaidi, A. ;

Lux-Steiner, M. .

THIN SOLID FILMS, 2008, 516 (20) :7051-7054

[10] ELECTRONIC-STRUCTURE OF THE TERNARY CHALCOPYRITE SEMICONDUCTORS CUA1S2, CUGAS2, CUINS2, CUA1SE2, CUGASE2, AND CUINSE2 [J].

JAFFE, JE ;

ZUNGER, A .

PHYSICAL REVIEW B, 1983, 28 (10) :5822-5847

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