High-temperature anomalies of dielectric constant in TiO2 thin films

被引：28

作者：

Bessergenev, Valentin ^{[1
]}

机构：

[1] Univ Algarve, FCT, P-8005139 Faro, Algarve, Portugal

来源：

MATERIALS RESEARCH BULLETIN | 2009年 / 44卷 / 08期

关键词：

Thin films; Vapor deposition; Dielectric properties; Electrical properties; TITANIUM-DIOXIDE; ELECTRICAL-PROPERTIES; CONDUCTIVITY; TRANSPORT; BEHAVIOR;

D O I：

10.1016/j.materresbull.2009.03.014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Anatase and rutile TiO2 thin films were prepared by chemical vapor deposition with precursors Ti(OPri)(4) and Ti(dpm)(2)(OPri)(2) (dpm = 2,2,6,6-tetramethylheptane-3,5-dione and Pr-i = isopropyl), respectively. The dielectric properties of TiO2 thin films have been studied in 20-1100 K temperature range in air, in controlled Ar/O-2 atmospheres, and in vacuum with silicon-based metal-insulator-semiconductor Au/TiO2/Si capacitors. High-temperature (T-c similar to 980 K) anomalous behavior of dielectric constant was observed in both anatase and rutile TiO2 thin films. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1722 / 1728

页数：7

共 20 条

[1]

ADAMS DM, 1974, INORGANIC SOLIDS, P72

[2] Study of physical and photocatalytic properties of titanium dioxide thin films prepared from complex precursors by chemical vapour deposition [J].