Measuring acid generation efficiency in chemically amplified resists with all three beams

被引：64

作者：

Szmanda, CR ^{[1
]}

Brainard, RL

Mackevich, JF

Awaji, A

Tanaka, T

Yamada, Y

Bohland, J

Tedesco, S

Dal'Zotto, B

Bruenger, W

Torkler, M

Fallmann, W

Loeschner, H

Kaesmaier, R

Nealey, PM

Pawloski, AR

机构：

[1] Shipley Co Inc, Marlborough, MA 01752 USA

[2] Shipley Far E Ltd, Niigata 95921, Japan

[3] CEA, LETI, F-38054 Grenoble 9, France

[4] Fraunhofer Inst Siliziumtechnol, D-25524 Itzehoe, Germany

[5] Vienna Univ Technol, A-1060 Vienna, Austria

[6] IMS Vienna, Vienna, Austria

[7] Siemens AG, D-81739 Munich, Germany

[8] Univ Wisconsin, Madison, WI 53706 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.591011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for measuring acid generation efficiency is presented and utilized to determine the relative efficiency of four photoacid generators (PAGs) upon radiation with photon, electron, and ion beams. In this method, chemically amplified resists are prepared with varying amounts of base, coated into thin films (1000 Angstrom), and exposed. Linear plots of the base concentration against the threshold exposure dose for each resist yield the threshold acid concentration and the acid generation race constant for each PAG. The acid-generating efficiency of the four PAGs (ND-Tf, TPS-Tf, TBI-PFOS, and TBI-Tf) upon irradiation with DUV (248 nm), EUV (13.4 nm), x-ray (1 nm), e beam (30 and 50 keV), and He+ ions is evaluated. (C) 1999 American Vacuum Society. [S0734-211X(99)19506-4].

引用

页码：3356 / 3361

页数：6

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