Symmetry of the electronic states of Si nanocrystals: An experimental study

被引：21

作者：

Kovalev, D ^{[1
]}

BenChorin, M ^{[1
]}

Diener, J ^{[1
]}

Averboukh, B ^{[1
]}

Polisski, G ^{[1
]}

Koch, F ^{[1
]}

机构：

[1] WEIZMANN INST SCI,DEPT CHEM PHYS,IL-76100 REHOVOT,ISRAEL

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 79卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.79.119

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We apply photoluminescence polarization spectroscopy to study the symmetry of the electronic states of Si nanocrystals. Under resonant excitation, the degree of the linear polarization memory of porous Si luminescence is higher than that observed for nonresonant excitation. We observed an anisotropy of the polarization memory with respect to the crystalline axes. We discuss the polarization properties in terms of the symmetry of the ground state of the exciton. We demonstrate that the anisotropy with respect to the crystalline axes is linked to the warping of the heavy hole subband.

引用

页码：119 / 122

页数：4

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