Spin-injection

被引：12

作者：

Osofsky, M ^{[1
]}

机构：

[1] USN, Res Lab, Complex Mat Sect, Washington, DC 20375 USA

来源：

JOURNAL OF SUPERCONDUCTIVITY | 2000年 / 13卷 / 02期

关键词：

spin-injection; spin-polarization; spin-polarized tunneling; spin-polarized transport;

D O I：

10.1023/A:1007747932314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

During the past decade there has been a growing interest in the properties of electronic systems driven out of equilibrium by the injection of spin-polarized carriers. Since ferromagnetic metals are characterized by majority and minority spin sub-bands, such a state can be realized and studied by current biasing structures consisting of ferromagnetic/non-ferromagnetic layers. This review describes several aspects of this area of research including the concept and measurement of spin polarization, the generic spin injection structure, spin-injection into various materials (noble metals, semiconductors, and superconductors), and magnetic tunneling phenomena.

引用

页码：209 / 219

页数：11

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