Spin-injection

被引:12
作者
Osofsky, M [1 ]
机构
[1] USN, Res Lab, Complex Mat Sect, Washington, DC 20375 USA
来源
JOURNAL OF SUPERCONDUCTIVITY | 2000年 / 13卷 / 02期
关键词
spin-injection; spin-polarization; spin-polarized tunneling; spin-polarized transport;
D O I
10.1023/A:1007747932314
中图分类号
O59 [应用物理学];
学科分类号
摘要
During the past decade there has been a growing interest in the properties of electronic systems driven out of equilibrium by the injection of spin-polarized carriers. Since ferromagnetic metals are characterized by majority and minority spin sub-bands, such a state can be realized and studied by current biasing structures consisting of ferromagnetic/non-ferromagnetic layers. This review describes several aspects of this area of research including the concept and measurement of spin polarization, the generic spin injection structure, spin-injection into various materials (noble metals, semiconductors, and superconductors), and magnetic tunneling phenomena.
引用
收藏
页码:209 / 219
页数:11
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