High conductance magnetoresistive tunnel junctions with multiply oxidized barrier

被引：20

作者：

Wong, PK ^{[1
]}

Evetts, JE ^{[1
]}

Blamire, MG ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.367862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated 8 x 8 mu m(2) mesa junctions from ultrahigh vacuum magnetron sputter-deposited Nb/Fe/Al2O3/Al/CoFe/Nb heterostructures. The Al2O3 barrier was prepared by the technique of multiple oxidation. The effect of multiple oxidation on the junction magnetoresistance (JMR) was investigated. JMR up to 6.2% at room temperature and 9.2% at 77 K was obtained. Junctions with the highest JMR have resistance-area products in the range required for device applications. (C) 1998 American Institute of Physics. [S0021-8979(98)52711-9].

引用

页码：6697 / 6699

页数：3

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