Characterization of Nd:Y3Al5O12 thin films grown on various substrates by pulsed laser deposition

被引：42

作者：

Ezaki, M ^{[1
]}

Obara, M ^{[1
]}

Kumagai, H ^{[1
]}

Toyoda, K ^{[1
]}

机构：

[1] RIKEN,INST PHYS & CHEM RES,WAKO,SAITAMA 35101,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 20期

关键词：

D O I：

10.1063/1.117749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial Nd-doped yttrium aluminum garnet (NdxY3-xAl5O12 Or Nd:YAG) films have been grown on various substrates by pulsed laser deposition for the purpose of fabricating diode-pumped waveguide lasers. The films were characterized by Rutherford backscattering, x-ray diffraction, atomic force microscopy, and photoluminescence measurements. Nd:YAG films on (100) silicon substrate with a large lattice mismatch show oriented stoichiometric growth. On the other hand, Nd:YAG films on garnet substrates (Nd undoped Gd3Ga5O12, Y3Al5P12 and Zr-, Sc-doped Gd3Ga5O12) show epitaxial growth with smooth surfaces. The optical properties of Nd-doped YAG thin films on various substrates were comparable to those of Nd:YAG bulk laser crystal. (C) 1996 American Institute of Physics.

引用

页码：2977 / 2979

页数：3

共 14 条

[1] PREPARATION OF SINGLE-CRYSTAL Y3AL5O12 THIN-FILM BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].